Dielectric thin films are a fundamental part of solid-state devices providing the
means for advanced structures and enhanced operation. Charged dielectrics are a particular kind
in which embedded charge is used to create a static electric field which can add functionality
and improve the performance of adjacent electronic materials. To date, the charge concentration
has been limited to intrinsic defects present after dielectric synthesis, unstable corona charging,
or complex implantation processes. While such charging mechanisms have been exploited in
silicon surface passivation and energy harvesters, an alternative is presented here. Solid-state
cations are migrated into SiO2 thin films using a gateless and implantation-free ion injecting
method, which can provide greater long-term durability and enable fine charge tailoring. We
demonstrate the migration kinetics and the stability of potassium, rubidium, and caesium
cations inside of SiO2 thin films, showing that the ion concentration within the film can be
tuned, leading to charge densities between 0.1-10 x 1012 qcm-2
. A comprehensive model of ion
injection and transport is presented along a detailed investigation of the kinetics of alkali
cations. Integrating ionic charge into dielectrics to produce controlled electric fields can enable
new architectures where field effect is exploited for improved electron devices.
